淮师新闻网7月23日电（记者 李东珂 马鹏程）7月22日下午，新加坡科技研究局（A*STAR）材料研究与工程研究所（IMRE）资深研究员刘洪飞博士应邀来太阳成集团tyc7111cc物电学院，作题为“Synthesis and Characteristics of 2D Materials Based on Molybdenum Disulphides and Trioxide”的学术报告，物电学院院长陈贵宾主持报告会。物理学省级重点建设学科部分成员参加报告会。

图为刘洪飞博士作学术报告。记者 李东珂 摄

刘洪飞博士从目前高性能材料的应用谈起，用通俗的语言深入浅出地带领大家走进二维材料的世界，具体而全面地介绍了自己带领的科研团队在大面积单层MoS2、α-MoO3等二维材料的实验制备、材料结构表征和性能分析，以及在相关光电探测器件的开发与应用等方面取得的最新进展和突破。

报告会结束后，刘洪飞博士和现场观众就物电学院翟章印教授提出的“如何通过Raman光谱判断MoS2的单层与多层”、李东珂博士提出的“CVD方法制备MoS2单层样品中具体的关键参数与生长机制“以及”MoS2材料与蛋白质、硅半导体材料的结合与应用”等学术问题进行深入交流。

报告人刘洪飞简介：

Dr Liu Hongfei（刘洪飞） is a senior scientist at the Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, technology and Research), Singapore.

He received his PhD degree in 2001 from the Institute of Physics, Chinese Academy of Sciences and experienced post-doc researches in US, Europe and Singapore during 2001-2006. He held an adjunct assistant professor position at the Department of Materials Science and Engineering, National University of Singapore during 2009-2011.

His earlier researches mainly focus on design, growth and characterization of semiconductor materials, heterostructures, and quantum devices, including GaAs-, InP-, dilute nitride-, III-nitride-based light-emitting diodes (LEDs), laser diodes, and/or high-power transistors, ZnO-based films and nanostructures, Ge(Ga) and GaAs/Ge superlattices, as well as earth abundant and eco-friendly photovoltaic materials.

A few years ago, he has partly shifted his research activities to non-graphene 2D materials. He also has industrial collaboration experience, e.g., via the Technology for Enterprise Capability Upgrading to Industrial Vision Technology Pte Ltd. during 2012-2013. He has published over 140 papers in peer-reviewed journals. In 2016, he has licensed an Invention Patent (co-inventor) to Geeplex Technologies Pte Ltd. He is an editorial member of many journals in the area of materials science and engineering, e.g., Scientific Report (NPG).